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2SD2385-B PDF预览

2SD2385-B

更新时间: 2024-11-25 19:59:11
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
4页 165K
描述
TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-21F1A, 3 PIN, BIP General Purpose Power

2SD2385-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.85外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:140 V
配置:DARLINGTON WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):9000
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:120 W
最大功率耗散 (Abs):120 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
VCEsat-Max:2.5 VBase Number Matches:1

2SD2385-B 数据手册

 浏览型号2SD2385-B的Datasheet PDF文件第2页浏览型号2SD2385-B的Datasheet PDF文件第3页浏览型号2SD2385-B的Datasheet PDF文件第4页 
2SD2385  
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)  
2SD2385  
Power Amplifier Applications  
Unit: mm  
High breakdown voltage: V  
= 140 V (min)  
CEO  
Complementary to 2SB1556  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
140  
140  
5
V
V
V
A
A
CBO  
CEO  
EBO  
I
8
C
Base current  
I
B
0.1  
Collector power dissipation  
(Tc = 25°C)  
P
120  
W
C
Junction temperature  
Storage temperature range  
T
150  
°C  
°C  
j
JEDEC  
JEITA  
T
stg  
55 to 150  
Equivalent Circuit  
TOSHIBA  
2-21F1A  
Weight: 9.75 g (typ.)  
COLLECTOR  
BASE  
100 Ω  
EMITTER  
1
2004-07-07  

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