是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 140 V |
配置: | DARLINGTON WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 9000 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 70 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 30 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2386-B | TOSHIBA |
获取价格 |
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe | |
2SD2386C | TOSHIBA |
获取价格 |
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SD2386-C | TOSHIBA |
获取价格 |
TRANSISTOR 7 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe | |
2SD2387 | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |
2SD2387A | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR | |
2SD2387-A | TOSHIBA |
获取价格 |
暂无描述 | |
2SD2387B | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR | |
2SD2387-B | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe | |
2SD2387C | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-247VAR | |
2SD2387-C | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 140 V, NPN, Si, POWER TRANSISTOR, 2-16C1A, 3 PIN, BIP General Purpose Powe |