Datasheet > 2SD2390

2SD2390

更新时间： 2024-09-26 06:19:31

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
4页	174K
描述
Silicon NPN Darlington Power Transistors

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中文翻译

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数据手册

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2SD2390 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Darlington Power Transistors

2SD2390

DESCRIPTION

·With TO-3PN package

·Complement to type 2SB1560

·High DC current gain

APPLICATIONS

·Audio ,regulator and general purpose

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

160

150

UNIT

Open base

Open collector

I_B

Base current

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-55~150

℃

T_j

T_stg

12 3 4

中文翻译

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与2SD2390相关器件

型号	品牌	获取价格	描述	数据表
2SD2390_01	SANKEN	获取价格	Silicon NPN Triple Diffused Planar Transistor
2SD2390O	ALLEGRO	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390P	SANKEN	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390P	ISC	获取价格	Transistor
2SD2390P	ALLEGRO	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390Y	ALLEGRO	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2391	KEXIN	获取价格	Medium Power Transistor
2SD2391	ROHM	获取价格	Medium Power Transistor (-60V, -2A, 60V, 2A)
2SD2391	TYSEMI	获取价格	Low saturation voltage. Collector-emitter voltage =60V. PC=2 W (on 40 40 0.7mm ceramic boa
2SD2391	CJ	获取价格	SOT-89-3L