Datasheet > 2SD2391-Q

2SD2391-Q

更新时间： 2024-09-27 01:08:23

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科信 - KEXIN		/
页数	文件大小	规格书
2页	1008K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD2391-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD2391

1.70 0.1

■ Features

● Low saturation voltage

● Collector-emitter voltage =60V

0.42 0.1

0.46 0.1

● Pc = 2W (on 40X40X0.7mm ceramic board).

● Complements the 2SB1561.

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

(Note.1)

(Note.2)

0.5

Collector Power Dissipation

℃

Junction Temperature

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 50 V , I

EB= 5V , I

= 0

100

0.35

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=1 A, I

=50mA

=1 A, I

FE(1)

CE= 2V, I

= 500mA

= 1.5A

390

DC current gain

hFE(2)

Collector output capacitance

Transition frequency

CB= 10V, I

E= 0,f=1MHz

^CE= 2V, I = -500mA,f=100MHz

210

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD2391-P

2SD2391-Q

120-270

DTQ*

2SD2391-R

180-390

DTR*

82-180

DTP*

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