Datasheet > 2SD2391

2SD2391

更新时间： 2024-09-27 14:54:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1324K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SD2391 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SD2391 ^{TRANSISTOR (NPN)}

SOT-89-3L

FEATURES

Low V_CE(sat)

1.BASE

1 2 3

2.COLLECTOR

3.EMITTER

MARKING

D T

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

P_C

0.5

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA,I_C=0

I_CBO

I_EBO

V_CB=50V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

f_T

V_CE=2V,I_C=0.5A

120

270

DC current gain

V_CE=2V,I_C=1.5A

Collector-emitter saturation voltage

Transition frequency

I_C=1A,I_B=50mA

0.35

V_CE=2V,I_C=0.5A, f=100MHz

V_CB=10V,I_E=0, f=1MHz

210

MHz

Output capacitance

Cob

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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