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2SD2391U PDF预览

2SD2391U

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 233K
描述
小信号晶体管

2SD2391U 数据手册

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2SD2391U  
NPN Silicon Epitaxial Planar Transistor  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
60  
60  
6
V
V
Collector Current  
2
A
Peak Collector Current (PW = 10 ms)  
ICP  
6
A
0.5 1)  
Ptot  
W
Total Power Dissipation  
2 2)  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
Unit  
250 1)  
Thermal Resistance from Junction to Ambient  
62.5 2)  
/W  
1) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.  
1 / 5  
®
Dated: 20/09/2022 Rev: 04  

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