Datasheet > 2SD2389P

2SD2389P

更新时间： 2024-02-09 06:58:23

品牌	Logo	应用领域
急速微 - ALLEGRO		局域网开关晶体管
页数	文件大小	规格书
1页	25K
描述
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

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技术参数
数据手册

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2SD2389P 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SD2389P 数据手册

Equivalent circuit

Darlington 2 S D2 3 8 9

(70Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)

Application : Audio, Series Regulator and General Purpose

External Dimensions MT-100(TO3P)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

2SD2389

Symbol

I^CBO

Conditions

Symbol

V^CBO

VCEO

VEBO

2SD2389

100max

150min

5000min

2.5max

3.0max

80typ

Unit

µA

Unit

±0.2

4.8

±0.4

15.6

160

V^CB=160V

±0.1

2.0

9.6

IEBO

V^EB=5V

150

V(BR)CEO

hFE

I^C=30mA

±0.1

ø3.2

V^CE=4V, IC=6A

I^C=6A, IB=6mA

V^CE=12V, IE=–1A

V^CB=10V, f=1MHz

VCE(sat)

VBE(sat)

80(Tc=25°C)

150

°C

MHz

COB

Tstg

85typ

–55 to +150

+0.2

-0.1

+0.2

-0.1

1.05

0.65

1.4

hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

■Typical Switching Characteristics (Common Emitter)

±0.1

5.45

Weight : Approx 2.0g

a. Type No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–5

–6

0.6typ

10.0typ

0.9typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=8A

IC=6A

0.5mA

IC=4A

I^B=0.3mA

0.2 0.5

50 100 200

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage VBE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

(V^CE=4V)

40000

50000

125˚C

Typ

25˚C

10000

5000

–30˚C

0.5

1000

500

0.2

1000

50 100

500 1000 2000

0.5

0.2

0.5

Time t(ms)

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

120

100

Typ

0.5

Without Heatsink

Natural Cooling

0.1

0.05

0.03

Without Heatsink

3.5

–0.02

–0.1

–1

–8

100

200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

148

中文翻译

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与2SD2389P相关器件

型号	品牌	获取价格	描述	数据表
2SD2389Y	SANKEN	获取价格	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2389Y	ALLEGRO	获取价格	Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390	ISC	获取价格	Silicon NPN Darlington Power Transistors
2SD2390	SANKEN	获取价格	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
2SD2390	SAVANTIC	获取价格	Silicon NPN Darlington Power Transistors
2SD2390_01	SANKEN	获取价格	Silicon NPN Triple Diffused Planar Transistor
2SD2390O	ALLEGRO	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390P	SANKEN	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
2SD2390P	ISC	获取价格	Transistor
2SD2390P	ALLEGRO	获取价格	Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,

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