Datasheet > 2SD2341

2SD2341

更新时间： 2024-09-12 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	64K
描述
Power Device - Power Transistors - Others

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中文翻译

获取价格

数据手册

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2SD2341 数据手册

Power Transistors

2SD2341

Silicon NPN triple diffusion planar type

Unit: mm

7.5±±.ꢀ

4.5±±.ꢀ

For power amplification

I Features

•

Low collector to emitter saturation voltage V_CE(sat)

High collector to emitter voltage V_CEO

Allowing automatic insertion possible with radial taping

±.65±±.ꢁ

±.85±±.ꢁ

ꢁ.±±±.ꢁ

±.8 C

±.7±±.ꢁ

ꢁ.ꢁ5±±.ꢀ

I Absolute Maximum Ratings T_C= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

±.5±±.ꢁ

±.4±±.ꢁ

200

±.8 C

ꢁ

ꢀ

180

1: Emitter

2: Collector

3: Base

ꢀ.5±±.ꢀ

I_C

1.5

MT-3-A1 Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

V_CB= 200 V, I_E= 0

V_EB= 4 V, I_C= 0

I_EBO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

V_CBO

V_CEO

V_EBO

I_C= 500 µA, I_E= 0

200

180

I_C= 5 mA, I_B= 0

I_E= 500 µA, I_C= 0

h_FE1

V_CE= 10 V, I_C= 150 mA

V_CE= 10 V, I_C= 400 mA

I_C= 500 mA, I_B= 50 mA

240

h_FE2

V_BE

Base to emitter voltage

Collector to emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

V_CB= 10 V, I_C= −100 mA, f = 200 MHz

150

MHz

Note) : Rank classification

Rank

h_FE1

60 to 140

100 to 240

358

12 3

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与2SD2341相关器件

型号	品牌	获取价格	描述	数据表
2SD2341R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 2A I(C) \| TO-126VAR
2SD2341S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 2A I(C) \| TO-126VAR
2SD2342	ETC	获取价格
2SD2342B	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SD2342C	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-247VAR
2SD2343	ROHM	获取价格	Power Transistor
2SD2343/N	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
2SD2343/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
2SD2343/NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126
2SD2343/NR	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-126