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2SD2345JS PDF预览

2SD2345JS

更新时间: 2024-11-05 13:04:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 41K
描述
暂无描述

2SD2345JS 数据手册

 浏览型号2SD2345JS的Datasheet PDF文件第2页 
Transistor  
2SD2345  
Silicon NPN epitaxial planer type  
For low-frequency amplification  
Unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
High foward current transfer ratio hFE  
.
1
Low collector to emitter saturation voltage VCE(sat)  
.
High emitter to base voltage VEBO  
.
3
Low noise voltage NV.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
40  
V
15  
V
100  
mA  
mA  
mW  
˚C  
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–75  
SS–Mini Type Package  
IC  
50  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Marking symbol : 1Z  
Tj  
125  
Tstg  
–55 ~ +125  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
1
Unit  
nA  
µA  
V
VCB = 20V, IE = 0  
VCE = 20V, IB = 0  
Collector cutoff current  
ICEO  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
IC = 1mA, IB = 0  
50  
40  
V
IE = 10µA, IC = 0  
VCE = 10V, IC = 2mA  
IC = 10mA, IB = 1mA  
15  
V
*
Forward current transfer ratio  
hFE  
400  
2000  
0.2  
Collector to emitter saturation voltage VCE(sat)  
0.05  
120  
V
Transition frequency  
fT  
V
CB = 10V, IE = –2mA, f = 200MHz  
MHz  
*hFE Rank classification  
Rank  
hFE  
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000  
1

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