是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.28 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.15 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 1200 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN SILVER COPPER |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2351T107U | ROHM |
获取价格 |
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD2351T107V | ROHM |
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150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD2351T107W | ROHM |
获取价格 |
150mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
2SD2351U | ROHM |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2351V | ROHM |
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2351VWT106 | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SC-70 | |
2SD2351W | ETC |
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TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR | |
2SD2352 | TOSHIBA |
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NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) | |
2SD2352_06 | TOSHIBA |
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Power Amplifier Applications | |
2SD2353 | TOSHIBA |
获取价格 |
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |