Datasheet > 2SD2351

2SD2351

更新时间： 2024-11-17 07:31:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	46K
描述
General Purpose Transistor

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中文翻译

获取价格

数据手册

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2SD2351 数据手册

SMD Type

TransistIoCrs

General Purpose Transistor

2SD2351

Features

High DC current gain.

High emitter-base voltage. (VCBO=12V)

Low saturation voltage.

(Typ. V^CE(sat)=0.3V at IC/IB=50mA/5mA)

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

Rating

Unit

V^CEO

V^EBO

0.15

0.2

A(DC)

A(Pulse)*

Collector current

I^C

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.2

150

Tstg

-55 to +150

* Single pulse Pw=100ms.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=10ìA

BV^CEOIC=1mA

BV^EBOIE=10ìA

I^CBO

I^EBO

VCB=50V

VEB=12V

0.3

ìA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

V^CE(sat)IC/IB=50mA/5mA

h^FEVCE/IC=5V/1mA

f^T

0.3

820

2700

VCE=5V, IE=-10mA, f=100MHz

VCB=5V, IE=0A, f=1MHz

250

3.5

MHz

Transition frequency

C^ob

hFE Classification

Marking

h^FE

BJV

BJW

820 1800

1200 2700

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