Datasheet > 2SD2345R

2SD2345R

更新时间： 2024-09-14 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	51K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| SC-74

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中文翻译

获取价格

数据手册

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2SD2345R 数据手册

Transistor

2SD2345

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

1.6±0.15

0.8±0.1

0.4

Features

High foward current transfer ratio h_FE

■

●

Low collector to emitter saturation voltage V_CE(sat)

High emitter to base voltage V_EBO

Low noise voltage NV.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

100

˚C

1:Base

2:Emitter

3:Collector

EIAJ:SC–75

SS–Mini Type Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

125

Marking symbol : 1Z

T_j

125

T_stg

–55 ~ +125

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 20V, I_E= 0

V_CE= 20V, I_B= 0

Collector cutoff current

I_CEO

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 2mA

I_C= 10mA, I_B= 1mA

Forward current transfer ratio

h_FE

400

2000

0.2

Collector to emitter saturation voltage V_CE(sat)

0.05

120

Transition frequency

f_T

_CB= 10V, I_E= –2mA, f = 200MHz

MHz

^*h_FERank classification

Rank

h_FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

12 3

中文翻译

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