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2SD2345GS PDF预览

2SD2345GS

更新时间: 2024-11-05 13:04:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 41K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

2SD2345GS 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):600JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2SD2345GS 数据手册

 浏览型号2SD2345GS的Datasheet PDF文件第2页 
Transistor  
2SD2345  
Silicon NPN epitaxial planer type  
For low-frequency amplification  
Unit: mm  
1.6±0.15  
0.8±0.1  
0.4  
0.4  
Features  
High foward current transfer ratio hFE  
.
1
Low collector to emitter saturation voltage VCE(sat)  
.
High emitter to base voltage VEBO  
.
3
Low noise voltage NV.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
40  
V
15  
V
100  
mA  
mA  
mW  
˚C  
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–75  
SS–Mini Type Package  
IC  
50  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
125  
Marking symbol : 1Z  
Tj  
125  
Tstg  
–55 ~ +125  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
1
Unit  
nA  
µA  
V
VCB = 20V, IE = 0  
VCE = 20V, IB = 0  
Collector cutoff current  
ICEO  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
IC = 1mA, IB = 0  
50  
40  
V
IE = 10µA, IC = 0  
VCE = 10V, IC = 2mA  
IC = 10mA, IB = 1mA  
15  
V
*
Forward current transfer ratio  
hFE  
400  
2000  
0.2  
Collector to emitter saturation voltage VCE(sat)  
0.05  
120  
V
Transition frequency  
fT  
V
CB = 10V, IE = –2mA, f = 200MHz  
MHz  
*hFE Rank classification  
Rank  
hFE  
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000  
1

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