2SD2150T100QR

更新时间： 2024-09-15 13:04:23

品牌	Logo	应用领域
罗姆 - ROHM		晶体小信号双极晶体管放大器
页数	文件大小	规格书
3页	113K
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中文翻译

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数据手册

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2SD2150T100QR 数据手册

Low Frequency Transistor (20V, 3A)

2SD2150

zFeatures

zDimensions(Unit : mm)

1) Low V^CE(sat).

2SD2150

V^CE(sat)= 0.2V(Typ.)

+0.2

−0.1

4.5

（I^C/ IB = 2A / 0.1A）

2) Excellent current gain characteristics.

3) Complements the 2SB1424.

+0.2

−0.1

1.5

1.6 0.1

(1) (2) (3)

+0.1

0.4

−0.05

0.5 0.1

3.0 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

zStructure

Epitaxial planar type

NPN silicon transistor

(1) Base

ROHM : MPT3

EIAJ : SC-62

(2) Collector

(3) Emitter

zAbsolute maximum ratings (Ta=25°C)

Abbreviated symbol: CF

∗

Parameter

Symbol

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

Denotes hFE

∗

A (DC)

A (Pulse)

Collector current

∗

0.5

Collector power dissipation

∗

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

°C

1 Single pulse Pw=10ms

2 Mounted on a 40×40×0.7mm Ceramic substrate.

∗

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

=50

=1mA

=50

−

CBO

EBO

CE(sat)

−

0.1

0.5

560

−

CB=30V

EB=5V

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

120

−

0.2

−

IC/IB=2A/0.1A

∗

−

CE=2V, I

=0.1A

= −0.5A, f=100MHz

=0A, f=1MHz

290

MHz

CE=2V, I

Transition frequency

Cob

−

CE=10V, I

Output capacitance

Measured using pulse current.

∗

www.rohm.com

2009.11 - Rev.B

1/2

12 3

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