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2SD2152T PDF预览

2SD2152T

更新时间: 2024-11-18 19:37:59
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 111K
描述
Transistor

2SD2152T 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SD2152T 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
TO – 92  
2SD2152 TRANSISTOR (NPN)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
FEATURES  
z
z
High DC Current Gain  
Low Saturation Medium Current Application  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
Unit  
V
22  
22  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
6
V
Collector Current  
3
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
700  
178  
150  
-55~+150  
mW  
/W  
RθJA  
Tj  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
22  
22  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 0.05mA,IE=0  
IC=1mA,IB=0  
V
IE=0.01mA,IC=0  
V
VCB=20V,IE=0  
0.1  
0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
VEB=5V,IC=0  
hFE(1)  
VCE=2V, IC=0.15mA  
VCE=2V, IC=100mA  
VCE=2V, IC=500mA  
IC=2000mA,IB=100mA  
VCE=6V,IC=50mA, f=30MHz  
130  
180  
180  
DC current gain  
hFE(2)  
950  
0.4  
hFE(3)  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
V
150  
MHz  
CLASSIFICATION OF hFE  
Q
R
S
T
RANK  
180-290  
270-380  
340-560  
560-950  
RANGE  
A,Dec,2010  

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