Datasheet > 2SD2152R

2SD2152R

更新时间： 2024-11-18 19:37:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体管
页数	文件大小	规格书
1页	111K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SD2152R 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD2152R 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

2SD2152 TRANSISTOR (NPN)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

High DC Current Gain

Low Saturation Medium Current Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

700

178

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 0.05mA,I_E=0

I_C=1mA,I_B=0

I_E=0.01mA,I_C=0

V_CB=20V,I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

V_CE=2V, I_C=0.15mA

V_CE=2V, I_C=100mA

V_CE=2V, I_C=500mA

I_C=2000mA,I_B=100mA

VCE=6V,IC=50mA, f=30MHz

130

180

DC current gain

h_FE(2)

950

0.4

h_FE(3)

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

150

MHz

CLASSIFICATION OF h_FE

RANK

180-290

270-380

340-560

560-950

RANGE

A,Dec,2010

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