Datasheet > 2SD2151P

2SD2151P

更新时间： 2024-11-05 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	68K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| SOT-186

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2151P 数据手册

Power Transistors

2SD2151

Silicon NPN epitaxial planar type

Unit: mm

For power switching

10.0 0.ꢀ

5.5 0.ꢀ

4.ꢀ 0.ꢀ

ꢀ.7 ^0.ꢀ

I Features

φ ꢁ.1 0.1

•

Low collector to emitter saturation voltage V_CE(sat)

Satisfactory linearity of forward current transfer ratio h_FE

Large collector current I_C

Full-pack package which can be installed to the heat sink with one

screw

1.ꢁ 0.ꢀ

1.4 0.1

+0.ꢀ

–0.1

0.5

0.8 0.1

I Absolute Maximum Ratings T_C= 25°C

ꢀ.54 0.ꢁ

5.08 0.5

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

130

1: Base

2: Collector

3: Emitter

ꢀ ꢁ

EIAJ: SC-67

TO-220F Package

I_C

T_C= 25°C

T_a= 25°C

P_C

Collector power

dissipation

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Collector cutoff current

Emitter cutoff current

Symbol

I_CBO

Conditions

Min

Typ

Max

Unit

µA

V_CB= 100 V, I_E= 0

V_EB= 5 V, I_C= 0

I_EBO

Collector to emitter voltage

Forward current transfer ratio

V_CEO

h_FE1

I_C= 10 mA, I_B= 0

V_CE= 2 V, I_C= 0.1 A

V_CE= 2 V, I_C= 3 A

V_CE= 2 V, I_C= 6 A

I_C= 6 A, I_B= 0.3 A

I_C= 10 A, I_B= 1 A

h_FE2

260

h_FE3

Collector to emitter saturation voltage V_CE(sat)1

V_CE(sat)2

0.5

1.5

2.5

Base to emitter saturation voltage

V_BE(sat)1

I_C= 6 A, I_B= 0.3 A

I_C= 10 A, I_B= 1 A

V_BE(sat)2

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.5 A, f = 1 MHz

I_C= 6 A, I_B1= 0.6 A, I_B2= − 0.6 A,

V_CC= 50 V

0.5

2.0

0.2

MHz

µs

Note) : Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3 4

中文翻译

下载PDF

与2SD2151P相关器件

型号	品牌	获取价格	描述	数据表
2SD2151Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 10A I(C) \| SOT-186
2SD2152	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152	CJ	获取价格	TO-92
2SD2152/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152/R	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152/RS	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152/S	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SD2152Q	ROHM	获取价格	3000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SD2152Q	CJ	获取价格	Transistor