Datasheet > 2SD2153

2SD2153

更新时间： 2024-11-18 06:16:47

品牌	Logo	应用领域
科信 - KEXIN		晶体放大器晶体管
页数	文件大小	规格书
1页	36K
描述
High Gain Amplifier Transistor

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中文翻译

获取价格

数据手册

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2SD2153 数据手册

SMD Type

Transistors

High Gain Amplifier Transistor

2SD2153

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

+0.1

1.80

-0.1

Features

Low saturation voltage.

Excellent DC current gain characteristics.

+0.1

0.53

-0.1

+0.1

0.48

-0.1

+0.1

0.44

-0.1

1. Base

+0.1

3.00

-0.1

2. Collector

3. Emiitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current

Collector power dissipation

Junction temperature

Storage temperature

P^C

0.5

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBOIC=50ìA

BVCEO IC=1mA

BV^EBOIE=50ìA

I^CBO

I^EBO

VCB=20V

VEB=5V

0.5

ìA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

V^CE(sat)IC=1A, IB=20mA

0.12

0.5

h^FE

f^T

VCE=6V, IC=0.5A

560

2700

VCE=10V, IE= -10mA, f=100MHz

VCB=10V, IE=0A, f=1MHz

110

MHz

Transition frequency

C^ob

hFE Classification

Marking

Rank

hFE

560 1200

820 1800

1200 2700

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