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2SD2153T101/E PDF预览

2SD2153T101/E

更新时间: 2024-11-18 18:37:31
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
3页 117K
描述
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,

2SD2153T101/E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.24
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):390JESD-30 代码:R-PSSO-F3
JESD-609代码:e2元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SD2153T101/E 数据手册

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
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暂无描述
2SD2153T101/UW ROHM

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
2SD2153T101E ROHM

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2000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR