是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.24 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 560 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN COPPER | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 110 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2153T100U | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 | |
2SD2153T100UW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T100V | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3 | |
2SD2153T100VW | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T101 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T101/E | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T101/EU | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T101/EV | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, | |
2SD2153T101/EW | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
2SD2153T101/U | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, |