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2SD2153T100/UV PDF预览

2SD2153T100/UV

更新时间: 2024-11-18 20:52:23
品牌 Logo 应用领域
罗姆 - ROHM 放大器晶体管
页数 文件大小 规格书
3页 76K
描述
2000mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR

2SD2153T100/UV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.24外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):560
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN COPPER端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):110 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SD2153T100/UV 数据手册

 浏览型号2SD2153T100/UV的Datasheet PDF文件第2页浏览型号2SD2153T100/UV的Datasheet PDF文件第3页 

与2SD2153T100/UV相关器件

型号 品牌 获取价格 描述 数据表
2SD2153T100U ROHM

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SD2153T100UW ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T100V ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SC-62, 3
2SD2153T100VW ROHM

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T101 ROHM

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T101/E ROHM

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Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T101/EU ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T101/EV ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,
2SD2153T101/EW ROHM

获取价格

Power Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD2153T101/U ROHM

获取价格

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon,