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2SD2153_09

更新时间： 2024-02-12 07:59:10

品牌	Logo	应用领域
罗姆 - ROHM		晶体放大器晶体管
页数	文件大小	规格书
3页	159K
描述
High gain amplifier transistor (25V, 2A)

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2SD2153_09 数据手册

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High gain amplifier transistor (25V, 2A)

2SD2153

Features

Dimensions (Unit : mm)

1) Low saturation voltage,

typically V^CE(sat)= 0.12V at IC = IB = 1A / 20mA

2) Excellent DC current gain characteristics.

4.0

1.0

2.5

0.5

( )

1

(

)

2

3

(

)

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

30

25

6

Unit

VCBO

VCEO

VEBO

V

V

V

2

A(DC)

A(Pulse)

Collector current

IC

∗1

3

0.5

2

Collector power dissipation

P

C

W

∗2

Junction temperature

Storage temperature

Tj

150

°C

°C

Tstg

−55 to +150

∗1

Single pulse, Pw=10ms

Mounted on a 40 40⁺^t0.7mm Ceramic substrate

+

∗2

Packaging specifications and hFE

Type

2SD2153

Package

MPT3

UVW

hFE

Marking

Code

DN

∗

T100

1000

Basic ordering unit (pieces)

∗ Denotes hFE

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

30

25

6

Typ.

−

−

−

−

−

0.12

−

110

22

Max.

−

−

Unit

V

Conditions

I

I

I

C

C

E

=50μA

=1mA

=50μA

CB =20V

EB =5V

V

−

V

I

CBO

EBO

CE(sat)

FE

−

−

−

820

−

0.5

0.5

0.5

1800

−

μA

μA

V

V

V

Emitter cutoff current

I

∗

Collector-emitter saturation voltage

DC current transfer ratio

V

I

C/I

B

=1A/20mA

h

−

MHz

pF

V

V

V

CE/IC =6V/0.5A

CE =10V,I

CB =10V,I

Transition frequency

f

T

E

E

=−10mA ,f= 100MHz

=0A ,f =1MHz

Output capacitance

Cob

−

−

∗

Measured using pulse current.

www.rohm.com

2009.12 - Rev.B

1/2

c

○ 2009 ROHM Co., Ltd. All rights reserved.

12 3

中文翻译

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