Datasheet > 2SD2153_09

2SD2153_09

更新时间： 2024-01-13 01:50:55

品牌	Logo	应用领域
罗姆 - ROHM		晶体放大器晶体管
页数	文件大小	规格书
3页	159K
描述
High gain amplifier transistor (25V, 2A)

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2SD2153_09 数据手册

High gain amplifier transistor (25V, 2A)

2SD2153

Features

Dimensions (Unit : mm)

1) Low saturation voltage,

typically V^CE(sat)= 0.12V at IC = IB = 1A / 20mA

2) Excellent DC current gain characteristics.

4.0

1.0

2.5

0.5

( )

(

)

(

)

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

A(DC)

A(Pulse)

Collector current

∗1

0.5

Collector power dissipation

∗2

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

∗1

Single pulse, Pw=10ms

Mounted on a 40 40⁺^t0.7mm Ceramic substrate

∗2

Packaging specifications and hFE

Type

2SD2153

Package

MPT3

UVW

hFE

Marking

Code

∗

T100

1000

Basic ordering unit (pieces)

∗ Denotes hFE

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

BVCEO

BVEBO

Min.

Typ.

−

0.12

−

110

Max.

−

Unit

Conditions

=50μA

=1mA

=50μA

CB =20V

EB =5V

−

CBO

EBO

CE(sat)

−

820

−

0.5

1800

−

μA

Emitter cutoff current

∗

Collector-emitter saturation voltage

DC current transfer ratio

C/I

=1A/20mA

−

MHz

CE/IC =6V/0.5A

CE =10V,I

CB =10V,I

Transition frequency

=−10mA ,f= 100MHz

=0A ,f =1MHz

Output capacitance

Cob

−

∗

Measured using pulse current.

www.rohm.com

2009.12 - Rev.B

1/2

12 3

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