Datasheet > 2SD2150U

2SD2150U

更新时间： 2024-11-19 14:54:23

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
5页	242K
描述
功率三极管

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2SD2150U 数据手册

2SD2150U

NPN Silicon Epitaxial Planar Power Transistor

Features

• Low frequency

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CEO

V_EBO

Collector Current

I_C

Peak Collector Current, Pulsed ¹⁾

I_CM

0.5 ²⁾

Total Power Dissipation

P_tot

2 ³⁾

Junction Temperature

T_J

150

℃

Storage Temperature Range

T_Stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

250 ²⁾

Thermal Resistance from Junction to Ambient

℃/W

62.5 ³⁾

¹⁾Single pulse P_W= 10 ms

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

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Dated: 22/05/2023 Rev: 03

12 3 4 5

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与2SD2150U相关器件

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2SD2152/Q	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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2SD2152/R	ROHM	获取价格	Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92