Datasheet > 2SD2074S

2SD2074S

更新时间： 2024-11-05 23:20:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	56K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SIP

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中文翻译

获取价格

数据手册

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2SD2074S 数据手册

Transistor

2SD2074

Silicon NPN epitaxial planer type

Unit: mm

For low-frequency output amplification

For muting

2.5±0.1

1.05

±0.05

6.9±0.1

4.0

(1.45)

0.8

0.7

For DC-DC converter

Features

■

0.65 max.

●

Low collector to emitter saturation voltage V_CE(sat)

●

Low ON resistance R_on.

High foward current transfer ratio h_FE

Allowing supply with the radial taping.

0.45⁺–0⁰.^.0¹5

2.5±0.5 2.5±0.5

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Note: In addition to the

lead type shown in

1:Emitter

2:Collector

the upper figure, the 3:Base

type as shown in

the lower figure is

also available.

MT2 Type Package

I_C

0.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

1.2±0.1

T_j

150

0.65

max.

T_stg

–55 ~ +150

0.1

0.45_–0.05

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

(HW type)

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 25V, I_E= 0

I_C= 10µA, I_E= 0

_C= 1mA, I_B= 0

min

typ

max

Unit

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

100

V_CBO

V_CEO

V_EBO

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 2V, I_C= 0.5A^*2

V_CE= 2V, I_C= 1A^*2

200

800

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 0.5A, I_B= 20mA

I_C= 0.5A, I_B= 50mA

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f= 1MHz

0.13

0.4

1.2

Transition frequency

Collector output capacitance

ON resistanse

f_T

200

MHz

C_ob

R_on

1.0

Ω

Measurement circuit

^*2Pulse measurement

1kΩ

Rank classification

I_B=1mA

FE1

f=1kHz

V=0.3V

Rank

h_FE1

V_B

V_A

V_V

200 ~ 350

300 ~ 500

400 ~ 800

V_B

R_on=

✕1000(Ω)

V_A–V_B

12 3

中文翻译

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与2SD2074S相关器件

型号	品牌	获取价格	描述	数据表
2SD2074-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
2SD2074T	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| SIP
2SD2075	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS)
2SD2075A	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, LAMP, SOLENOID DRIVE APPLICATIONS)
2SD2076	TOSHIBA	获取价格	TRANSISTOR 5 A, 100 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
2SD2079	TOSHIBA	获取价格	NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIO
2SD2079	ISC	获取价格	Silicon NPN Power Transistors
2SD2079	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD2079_06	TOSHIBA	获取价格	High-Power Switching Applications
2SD2081	ISC	获取价格	Silicon NPN Darlington Power Transistor

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