Datasheet > 2SD2081_01

2SD2081_01

更新时间： 2024-09-16 07:31:39

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	27K
描述
Silicon NPN Triple Diffused Planar Transistor

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中文翻译

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数据手册

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2SD2081_01 数据手册

Equivalent

circuit

Darlington 2 S D2 0 8 1

(2kΩ)(200Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)

Application : Driver for Solenoid, Motor and General Purpose

External Dimensions FM20(TO220F)

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

Symbol

I^CBO

Conditions

V^CB=120V

Unit

µA

Ratings

10max

120min

2000min

1.5max

2.0max

60typ

Symbol

Unit

±0.2

4.2

±0.2

10.1

0.5

2.8

V^CBO

VCEO

VEBO

120

IEBO

V^EB=6V

120

V(BR)CEO

hFE

I^C=10mA

±0.2

ø3.3

V^CE=4V, IC=5A

I^C=5A, IB=5mA

V^CE=12V, IE=–0.5A

V^CB=10V, f=1MHz

10(Pulse15)

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

MHz

±0.15

1.35

±0.15

1.35

COB

95typ

Tstg

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

±0.2

2.2

Weight : Approx 2.0g

a. Part No.

b. Lot No.

C E

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=10A

I^B=0.5mA

0.2 0.5

50 100 200

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

^j-at Characteristics

(VCE=4V)

20000

10000

5000

10000

5000

Typ

1000

500

1000

500

0.5

100

0.2

100

1000

0.03

0.1

0.5

0.03

0.1

0.5

Collector Current IC(A)

Time t(ms)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

120

100

Typ

0.5

Without Heatsink

Natural Cooling

0.1

Without Heatsink

0.05

–0.05 –0.1

–0.5

–1

–10

–5

100

200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current IE(A)

Ambient Temperature Ta(˚C)

145

中文翻译

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