Datasheet > 2SD2089

2SD2089

更新时间： 2024-11-09 07:31:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD2089 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2089

DESCRIPTION

·With TO-3P(H)IS package

·Built-in damper diode

·High voltage ,high speed

·Low collector saturation voltage

APPLICATIONS

·Small screen color TV horizontal

output applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-3P(H)IS) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

CONDITIONS

Open emitter

VALUE

1500

600

UNIT

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

3.5

I_B

Base current

Ta=25℃

Tc=25℃

3.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

150

-55~150

℃

T_j

T_stg

12 3

中文翻译

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