Datasheet > 2SD2083_01

2SD2083_01

更新时间： 2024-11-06 12:20:31

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	33K
描述
Silicon NPN Triple Diffused Planar Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD2083_01 数据手册

Equivalent

circuit

Darlington 2 S D2 0 8 3

(2kΩ)(100Ω)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)

Application : Driver for Solenoid, Motor and General Purpose

External Dimensions MT-100(TO3P)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Ratings

Symbol

Conditions

Symbol

V^CBO

VCEO

VEBO

Unit

Ratings

10max

120min

2000min

1.8max

2.5max

20typ

Unit

µA

±0.2

4.8

±0.4

15.6

±0.1

2.0

120

ICBO

V^CB=120V

9.6

120

IEBO

V^EB=6V

25(Pulse40)

V(BR)CEO

hFE

I^C=25mA

±0.1

ø3.2

V^CE=4V, IC=12A

I^C=12A, IB=24mA

V^CE=12V, IE=–1A

V^CB=10V, f=1MHz

VCE(sat)

VBE(sat)

120(Tc=25°C)

150

°C

MHz

+0.2

-0.1

+0.2

-0.1

COB

Tstg

340typ

–55 to +150

1.05

0.65

1.4

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 6.0g

a. Part No.

V^CC

(V)

(Ω)

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

I^B2

(mA)

ton

(µs)

tstg

(µs)

b. Lot No.

–5

–24

1.0typ

6.0typ

1.0typ

–

I^CV^CECharacteristics (Typical)

VCE(sat) IB Characteristics (Typical)

I^CV^BETemperature Characteristics (Typical)

(VCE=4V)

IC=25A

12A

0.5

50 100

500

2.2

Collector-Emitter Voltage V^CE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

hFE IC Characteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

j-a t Characteristics

(VCE=4V)

20000

10000

5000

20000

10000

5000

Typ

0.5

1000

500

1000

500

100

0.2

0.5

¹⁰0⁰.02

0.5

0.1

100

1000

Collector Current IC(A)

Time t(ms)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

100

120

100

Typ

Without Heatsink

Natural Cooling

0.5

Without Heatsink

3.5

–0.1

0.2

–0.5

–1

–5

–10

100

200

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

147

中文翻译

下载PDF

与2SD2083_01相关器件

型号	品牌	获取价格	描述	数据表
2SD2088	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2088_03	TOSHIBA	获取价格	Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2088_09	TOSHIBA	获取价格	Micro Motor Drive, Hammer Drive Applications
2SD2088TPE6	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign
2SD2089	ISC	获取价格	Silicon NPN Power Transistors
2SD2089	JMNIC	获取价格	Silicon NPN Power Transistors
2SD2089	TOSHIBA	获取价格	TRANSISTOR 3.5 A, 600 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
2SD2089	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD2089_15	JMNIC	获取价格	Silicon NPN Power Transistors
2SD2089_2015	JMNIC	获取价格	Silicon NPN Power Transistors