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2SD2074T PDF预览

2SD2074T

更新时间： 2024-11-04 23:20:31
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 56K
描述
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | SIP

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中文翻译

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2SD2074T 数据手册

 浏览型号2SD2074T的Datasheet PDF文件第2页浏览型号2SD2074T的Datasheet PDF文件第3页 
Transistor  
2SD2074  
Silicon NPN epitaxial planer type  
Unit: mm  
For low-frequency output amplification  
For muting  
2.5±0.1  
1.05  
±0.05  
6.9±0.1  
4.0  
(1.45)  
0.8  
0.7  
For DC-DC converter  
Features  
■
0.65 max.  
●
Low collector to emitter saturation voltage VCE(sat)  
.
●
●
●
Low ON resistance Ron.  
High foward current transfer ratio hFE  
Allowing supply with the radial taping.  
.
0.45+–00..015  
2.5±0.5 2.5±0.5  
1
2
3
Absolute Maximum Ratings (Ta=25˚C)  
■
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
25  
Note: In addition to the  
lead type shown in  
1:Emitter  
2:Collector  
20  
V
the upper figure, the 3:Base  
12  
V
type as shown in  
the lower figure is  
also available.  
MT2 Type Package  
1
A
IC  
0.5  
1
A
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
W
˚C  
˚C  
1.2±0.1  
Tj  
150  
0.65  
max.  
Tstg  
–55 ~ +150  
+
0.1  
0.45–0.05  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
(HW type)  
Electrical Characteristics (Ta=25˚C)  
■
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 25V, IE = 0  
IC = 10µA, IE = 0  
C = 1mA, IB = 0  
min  
typ  
max  
Unit  
nA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
100  
VCBO  
VCEO  
VEBO  
25  
20  
I
V
IE = 10µA, IC = 0  
12  
V
*1  
hFE1  
hFE2  
VCE = 2V, IC = 0.5A*2  
VCE = 2V, IC = 1A*2  
200  
60  
800  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 0.5A, IB = 20mA  
IC = 0.5A, IB = 50mA  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0, f= 1MHz  
0.13  
0.4  
1.2  
V
V
Transition frequency  
Collector output capacitance  
ON resistanse  
fT  
200  
10  
MHz  
pF  
Cob  
Ron  
*3  
1.0  
Ω
*3  
R
on  
Measurement circuit  
*2 Pulse measurement  
1kΩ  
*1  
h
Rank classification  
IB=1mA  
FE1  
f=1kHz  
V=0.3V  
Rank  
hFE1  
R
S
T
VB  
VA  
VV  
200 ~ 350  
300 ~ 500  
400 ~ 800  
VB  
Ron=  
✕1000(Ω)  
VA–VB  
1
123

中文翻译

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