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2SD1975AP

更新时间： 2024-11-24 13:04:23

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管放大器局域网
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3页	57K
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2SD1975AP 数据手册

Power Transistors

2SD1975, 2SD1975A

Silicon NPN triple diffusion planar type

For high power amplification

Unit: mm

Complementary to 2SB1317 and 2SB1317A

φ 3.3±0.2

5.0±0.3

20.0±0.5

3.0

Features

■

●

Satisfactory foward current transfer ratio h_FEcollector current I_C

characteristics

●

Wide area of safe operation (ASO)

●

1.5

High transition frequency f_T

●

Optimum for the output stage of a HiFi audio amplifier

1.5

2.0±0.3

2.7±0.3

3.0±0.3

Absolute Maximum Ratings (T =25˚C)

■

1.0±0.2

Parameter

Symbol

Ratings

Unit

0.6±0.2

Collector to

2SD1975

2SD1975A

2SD1975

180

5.45±0.3

V_CBO

10.9±0.5

base voltage

Collector to

200

180

V_CEO

1:Base

2:Collector

3:Emitter

emitter voltage 2SD1975A

Emitter to base voltage

Peak collector current

Collector current

200

V_EBO

I_CP

TOP–3L Package

I_C

Collector power T_C=25°C

150

P_C

dissipation

Ta=25°C

3.5

Junction temperature

Storage temperature

T_j

150

˚C

T_stg

–55 to +150

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff

2SD1975

V_CB= 180V, I_E= 0

current

2SD1975A

V_CB= 200V, I_E= 0

Emitter cutoff current

I_EBO

h_FE1

V_EB= 3V, I_C= 0

µA

V_CE= 5V, I_C= 20mA

V_CE= 5V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

h_FE3

V_BE

200

V_CE= 5V, I_C= 8A

1.8

2.5

Collector to emitter saturation voltage V_CE(sat)

I_C= 10A, I_B= 1A

Transition frequency

f_T

V_CE= 5V, I_C= 0.5A, f = 1MHz

V_CB= 10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

200

^*h_FE2Rank classification

Rank

h_FE2

60 to 120

80 to 160

100 to 200

12 3

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