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2SD1821 PDF预览

2SD1821

更新时间: 2024-09-08 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 40K
描述
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

2SD1821 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):130
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SD1821 数据手册

 浏览型号2SD1821的Datasheet PDF文件第2页 
Transistor  
2SD1821, 2SD1821A  
Silicon NPN epitaxial planer type  
For high breakdown voltage low-frequency and low-noise  
amplification  
Unit: mm  
Features  
High collector to emitter voltage VCEO  
2.1±0.1  
0.425  
1.25±0.1  
0.425  
.
Low noise voltage NV.  
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
3
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
Ratings  
150  
Unit  
Collector to  
2SD1821  
2SD1821A  
2SD1821  
VCBO  
V
base voltage  
Collector to  
185  
0.2±0.1  
150  
VCEO  
V
emitter voltage 2SD1821A  
Emitter to base voltage  
Peak collector current  
Collector current  
185  
1:Base  
VEBO  
ICP  
IC  
5
V
mA  
mA  
mW  
˚C  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
100  
50  
(2SD1821)  
(2SD1821A)  
Marking symbol : P  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
L
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
Collector cutoff current  
VCB = 100V, IE = 0  
1
µA  
Collector to emitter 2SD1821  
150  
185  
5
VCEO  
IC = 100µA, IB = 0  
V
V
voltage  
2SD1821A  
Emitter to base voltage  
VEBO  
IE = 10µA, IC = 0  
*
Forward current transfer ratio  
hFE  
VCE = 5V, IC = 10mA  
130  
330  
1
Collector to emitter saturation voltage VCE(sat)  
IC = 30mA, IB = 3mA  
V
MHz  
pF  
Transition frequency  
fT  
VCB = 10V, IE = –10mA, f = 200MHz  
VCB = 10V, IE = 0, f = 1MHz  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
150  
Collector output capacitance  
Cob  
2.3  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
130 ~ 220  
PR  
185 ~ 330  
PS  
2SD1821  
Marking  
Symbol  
2SD1821A  
LR  
LS  
1

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