Datasheet > 2SD1821-R

2SD1821-R

更新时间： 2022-02-26 12:23:36

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描述
NPN Transistors

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数据手册

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2SD1821-R 数据手册

SMD Type

Transistors

NPN Transistors

2SD1821

■ Features

● Low Collector-to-Emitter Saturation Voltage

● Low noise voltage NV.

● Complementary to 2SB1220

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

150

Unit

VCBO

VCEO

VEBO

150

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

℃

100

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

150

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 100 V , I = 0

E= 0

CBO

EBO

^EB= 5V , I

=30mA, I

0.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=3mA

=30mA, I

1.2

330

hFE

^CE= 5V, I

C= 10mA

130

CE = 10V, I

C = 1mA, GV = 80dB

Noise voltage

150

= 100kΩ, Function = FLAT

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= -10 mA,f=200MHz

2.3

150

MHz

■ Classification of hfe

Type

Range

Marking

2SD1821-R

130-220

2SD1821-S

185-330

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