Datasheet > 2SD1821R

2SD1821R

更新时间： 2024-09-22 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| NPN \| 150V V(BR)CEO \| 50MA I(C) \| TO-236

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中文翻译

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数据手册

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2SD1821R 数据手册

Transistor

2SD1821, 2SD1821A

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise

amplification

Unit: mm

Features

High collector to emitter voltage V_CEO

2.1±0.1

■

0.425

1.25±0.1

0.425

●

Low noise voltage NV.

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

Ratings

150

Unit

Collector to

2SD1821

2SD1821A

2SD1821

V_CBO

base voltage

Collector to

185

0.2±0.1

150

V_CEO

emitter voltage 2SD1821A

Emitter to base voltage

Peak collector current

Collector current

185

1:Base

V_EBO

I_CP

I_C

˚C

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

100

(2SD1821)

(2SD1821A)

Marking symbol : P

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 100V, I_E= 0

µA

Collector to emitter 2SD1821

150

185

V_CEO

I_C= 100µA, I_B= 0

voltage

2SD1821A

Emitter to base voltage

V_EBO

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 5V, I_C= 10mA

130

330

Collector to emitter saturation voltage V_CE(sat)

I_C= 30mA, I_B= 3mA

MHz

Transition frequency

f_T

V_CB= 10V, I_E= –10mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

V_CE= 10V, I_C= 1mA, G_V= 80dB

R_g= 100kΩ, Function = FLAT

150

Collector output capacitance

C_ob

2.3

Noise voltage

150

^*h_FERank classification

Rank

h_FE

130 ~ 220

185 ~ 330

2SD1821

Marking

Symbol

2SD1821A

12 3

中文翻译

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