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2SD1823GT PDF预览

2SD1823GT

更新时间: 2024-09-23 13:04:23
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
2页 39K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SD1823GT 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

2SD1823GT 数据手册

 浏览型号2SD1823GT的Datasheet PDF文件第2页 
Transistor  
2SD1823  
Silicon NPN epitaxial planer type  
For low-frequency amplification  
Unit: mm  
2.1±0.1  
Features  
High foward current transfer ratio hFE  
0.425  
1.25±0.1  
0.425  
.
Low collector to emitter saturation voltage VCE(sat)  
.
1
High emitter to base voltage VEBO  
.
Low noise voltage NV.  
3
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
40  
V
1:Base  
2:Emitter  
3:Collector  
EIAJ:SC–70  
S–Mini Type Package  
15  
V
100  
mA  
mA  
mW  
˚C  
IC  
50  
Marking symbol : 1Z  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
1
Unit  
nA  
µA  
V
VCB = 20V, IE = 0  
Collector cutoff current  
ICEO  
VCE = 20V, IB = 0  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
IC = 10µA, IE = 0  
50  
40  
IC = 1mA, IB = 0  
V
IE = 10µA, IC = 0  
15  
V
*
Forward current transfer ratio  
hFE  
VCE = 10V, IC = 2mA  
IC = 10mA, IB = 1mA  
VCB = 10V, IE = –2mA, f = 200MHz  
400  
1000  
0.05  
120  
2000  
0.2  
Collector to emitter saturation voltage VCE(sat)  
V
Transition frequency  
fT  
MHz  
*hFE Rank classification  
Rank  
hFE  
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000  
1ZR 1ZS 1ZT  
Marking Symbol  
1

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