Datasheet > 2SD1823T

2SD1823T

更新时间： 2024-09-22 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	49K
描述
TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| TO-236VAR

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中文翻译

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数据手册

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2SD1823T 数据手册

Transistor

2SD1823

Silicon NPN epitaxial planer type

For low-frequency amplification

Unit: mm

2.1±0.1

Features

High foward current transfer ratio h_FE

■

0.425

1.25±0.1

0.425

●

Low collector to emitter saturation voltage V_CE(sat)

High emitter to base voltage V_EBO

Low noise voltage NV.

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

0.2±0.1

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

S–Mini Type Package

100

˚C

I_C

Marking symbol : 1Z

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

100

Unit

µA

V_CB= 20V, I_E= 0

Collector cutoff current

I_CEO

V_CE= 20V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

I_E= 10µA, I_C= 0

Forward current transfer ratio

h_FE

V_CE= 10V, I_C= 2mA

I_C= 10mA, I_B= 1mA

V_CB= 10V, I_E= –2mA, f = 200MHz

400

1000

0.05

120

2000

0.2

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

f_T

MHz

^*h_FERank classification

Rank

h_FE

400 ~ 800 600 ~ 1200 1000 ~ 2000

1ZR 1ZS 1ZT

Marking Symbol

12 3

中文翻译

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