Datasheet > 2SD1820AS

2SD1820AS

更新时间： 2024-09-08 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管放大器
页数	文件大小	规格书
3页	63K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 500MA I(C) \| TO-236VAR

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中文翻译

获取价格

数据手册

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2SD1820AS 数据手册

Transistor

2SD1820, 2SD1820A

Silicon NPN epitaxial planer type

For general amplification

Unit: mm

Complementary to 2SB1219 and 2SB1219A

Features

ꢀ

Low collector to emitter saturation voltage V_CE(sat)

ꢀ

S-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Absolute Maximum Ratings (Ta=25˚C)

ꢀ

Parameter

Symbol

Ratings

Unit

Collector to

2SD1820

2SD1820A

2SD1820

V_CBO

base voltage

Collector to

V_CEO

emitter voltage 2SD1820A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

1:Base

2:Emitter

3:Collector

EIAJ:SC–70

SMini3-G1 Package

500

˚C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

(2SD1820)

(2SD1820A)

Marking symbol : W

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

ꢀ

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= 20V, I_E= 0

0.1

µA

Collector to base

voltage

2SD1820

2SD1820A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD1820

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SD1820A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA^*2

V_CB= 10V, I_E= –50mA^*2, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

160

340

0.6

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

0.35

200

MHz

Transition frequency

f_T

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

2SD1820

Marking

Symbol

2SD1820A

632

12 3

中文翻译

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