5秒后页面跳转
2SD1820GS PDF预览

2SD1820GS

更新时间: 2024-09-10 06:20:19
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 281K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SD1820GS 数据手册

 浏览型号2SD1820GS的Datasheet PDF文件第2页浏览型号2SD1820GS的Datasheet PDF文件第3页浏览型号2SD1820GS的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors  
2SD1820G  
Silicon NPN epitaxial planar type  
For general amplification  
Complementary to 2SB1219G  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
S-Mini type package, allowing downsizing of the equipment an
automatic insertion through the tape packing and the magazine  
packing.  
Code  
SMini3-F2  
Markng Symbol: X  
Pin Nae  
1: B
Absolute Maximum Ratings Ta = 25°C  
2: Em
Parameter  
Symbol  
Ratin
Unit  
V
ollector  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) VEBO  
V
5
V
Collector current  
ICP  
PC  
Tj  
500  
mA  
A
Peak collector current  
Collector power dissipati
Junction temperature  
Storage temperatu
1
15
mW  
°C  
°C  
50  
Tstg  
55 to +50  
Electricharacteristis Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Colletor-base voltage (Emitter opn)  
Collectorltag(Base open)  
Emitterollector open)  
Collector-basnt (Emitter open)  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
V
IE = 10 µA, IC = 0  
V
VCB = 20 V, IE = 0  
0.1  
µA  
1
2
Forward current nsfer ratio *  
hFE1  
hFE2  
VCE = 10 VIC = 150 mA  
VCE = 10 V, IC = 500 mA  
85  
40  
340  
*
1
Collector-emitter saturation voltage *  
VCE(sat) IC = 300 mA, IB = 30 mA  
0.35  
200  
6
0.60  
15  
V
MHz  
pF  
1
Transition frequency *  
fT  
VCB = 10 V, IE = −50 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE IDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
85 to 170  
XQ  
R
120 to 240  
XR  
S
170 to 340  
XS  
No-rank  
85 to 340  
X
hFE1  
Marking symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: May 2007  
SJC00373AED  
1

与2SD1820GS相关器件

型号 品牌 获取价格 描述 数据表
2SD1820Q ETC

获取价格

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236VAR
2SD1820-Q KEXIN

获取价格

NPN Transistors
2SD1820R ETC

获取价格

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236VAR
2SD1820-R KEXIN

获取价格

NPN Transistors
2SD1820S ETC

获取价格

TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-236VAR
2SD1820-S KEXIN

获取价格

NPN Transistors
2SD1821 PANASONIC

获取价格

Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise a
2SD1821 KEXIN

获取价格

Silicon NPN Epitaxial Planar Type
2SD1821 TYSEMI

获取价格

High collector-emitter voltage VCEO Low noise voltage NV
2SD1821/2SD1821A ETC

获取价格

2SD1821. 2SD1821A - NPN Transistor