This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■ Features
■ Package
•
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Code
SMini3-F2
Marking Symbol: X
Pin Name
1: Base
•
•
■ Absolute Maximum Ratings Ta = 25°C
2: Emitter
Parameter
Symbol
Rating
Unit
V
3: Collector
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
60
50
V
5
V
Collector current
IC
ICP
PC
Tj
500
mA
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1
150
mW
°C
°C
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCB = 20 V, IE = 0
0.1
µA
1
2
Forward current transfer ratio *
hFE1
hFE2
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
85
40
340
*
1
Collector-emitter saturation voltage *
VCE(sat) IC = 300 mA, IB = 30 mA
0.35
200
6
0.60
15
V
MHz
pF
1
Transition frequency *
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
85 to 170
XQ
R
120 to 240
XR
S
170 to 340
XS
No-rank
85 to 340
X
hFE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
SJC00373AED
1