Datasheet > 2SD1820

2SD1820

更新时间： 2024-09-09 06:23:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	46K
描述
Silicon NPN Epitaxial Planar Type

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中文翻译

获取价格

数据手册

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2SD1820 数据手册

SMD Type

TransistIoCrs

Silicon NPN Epitaxial Planar Type

2SD1820

Features

Low collector-emitter saturation voltage VCE(sat).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

500

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

P^C

150

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

IC = 10 ìA, IE = 0

Min

Typ

Max

Unit

Collector-base voltage

V^CBO

V^CEO

V^EBO

I^CBO

h^FE

Collector-emitter voltage

Emitter-base voltage

IC = 2 mA, IB = 0

IE = 10 ìA, IC = 0

Collector cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

VCB = 20 V, IE = 0

VCE = 10 V, IC = 150 mA

0.1

340

0.6

ìA

V^CE(sat)IC = 300 mA, IB = 30 mA

0.35

200

f^T

VCB = 10 V, IE = -50 mA, f = 200 MHz

VCB = 10 V, IE = 0, f = 1 MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

Rank

h^FE

85 170

120 240

170 340

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