Datasheet > 2SD1820A-R

2SD1820A-R

更新时间： 2024-09-10 01:08:43

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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1820A-R 数据手册

SMD Type

Transistors

NPN Transistors

2SD1820A

■ Features

● Low Collector-to-Emitter Saturation Voltage

● Complementary to 2SB1219A

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

0.5

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

℃

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 2 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

CB= 50 V , I

EB= 5V , I

= 0

0.1

0.6

1.2

340

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=300mA, I

=30mA

0.35

=300mA, I

hFE(1)

CE= 10V, I

CB= 10V, I

^CE= 10V, I

= 150mA

DC current gain

hFE(2)

C= 500 mA

Collector output capacitance

Transition frequency

Cob

E= 0,f=1MHz

E= -50 mA,f=200MHz

200

MHz

■ Classification of hfe(1)

Type

Range

Marking

2SD1820A-Q

85-175

2SD1820A-R

120-240

2SD1820A-S

170-340

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