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2SD1820A PDF预览

2SD1820A

更新时间: 2024-09-08 22:52:47
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
2页 63K
描述
Silicon NPN epitaxial planer type

2SD1820A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SD1820A 数据手册

 浏览型号2SD1820A的Datasheet PDF文件第2页 
Transistors  
2SD1820A  
Silicon NPN epitaxial planer type  
Unit: mm  
For general amplification  
+±.1±  
+±.1  
–±.±  
±.15  
±.3  
–±.±5  
Complementary to 2SB1219A  
3
I Features  
Low collector to emitter saturation voltage VCE(sat)  
S-mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
(±.65) (±.65)  
1.3±±.1  
2.±±±.2  
°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
60  
1: Base  
2: Emitter  
3: Collector  
50  
V
EIAJ: SC-70  
S-Mini Type Package  
5
V
1
500  
A
Marking Symbol: X  
IC  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Tj  
150  
Tstg  
55 to +150  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCB = 20 V, IE = 0  
0.1  
VCBO  
VCEO  
VEBO  
IC = 10 µA, IE = 0  
60  
50  
5
IC = 2 mA, IB = 0  
V
IE = 10 µA, IC = 0  
V
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = 10 V, IC = 150 mA  
VCE = 10 V, IC = 500 mA  
IC = 300 mA, IB = 30 mA  
VCB = 10 V, IE = −50 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
85  
40  
340  
0.6  
15  
1
Collector to emitter saturation voltage *  
VCE(sat)  
fT  
0.35  
200  
6
V
MHz  
pF  
1
Transition frequency *  
Collector output capacitance  
Cob  
Note) 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
hFE1  
Q
R
S
170 to 340  
XS  
No-rank  
85 to 340  
X
85 to 170  
XQ  
120 to 240  
XR  
Marking symbol  
Product of no-rank is not classified and have no indication for rank.  
1

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