Datasheet > 2SD1297_2015

2SD1297_2015

更新时间： 2024-11-03 01:17:43

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描述
Silicon NPN Transistors

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数据手册

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2SD1297_2015 数据手册

Product Specification

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2SD1297

Silicon NPN Transistors

C E

ꢀFeatures

·Darlington

·With TO-3PFa package

·Low speed power switching applications

ꢀAbsolute Maximum Ratings Tc=25℃

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

RATING

150

UNIT

100

Collector current-Continuous

Total Power Dissipation@TC=25℃

Junction temperature

P_D

100

℃

T_j

150

T_stg

Storage temperature

-55~150

TO-3PFa

ꢀElectrical Characteristics Tc=25℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C=100mA; I_B=0

100

V_CBO

I_CEO

Collector-Base Voltage

Collector Cutoff Current

I_CBO

Collector Cutoff Current

V_CB=100V; I_E=0

V_EB=5V; I_C=0

I_EBO

Emitter Cutoff Current

V_EBO

Emitter-Base Voltage

V_CE(sat-1)

V_CE(sat-2)

h_FE-1

Collector-emitter saturation voltages

Forward current transfer ratio

Base-emitter saturation voltages

Transition frequency

I_C=15A; I_B=0.03A

I_C=15A; V_CE=2V

I_C=15A; I_B=0.03A

1.5

30000

2.2

1000

h_FE-2

V_BE(sat)1

V_BE(sat)2

f_T

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