Datasheet > 2SC5606(NE66219)

2SC5606(NE66219)

更新时间： 2024-11-05 23:20:23

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其他 - ETC		/
页数	文件大小	规格书
16页	68K
描述
Discrete

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数据手册

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2SC5606(NE66219) 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5606

NPN SILICON RF TRANSISTOR FOR

LOW NOISE · HIGH-GAIN AMPLIFICATION

3-PIN ULTRA SUPER MINIMOLD

FEATURES

•

Suitable for high-frequency oscillation

f^T= 25 GHz technology adopted

3-pin ultra super minimold

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5606

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (collector) face the perforation side of the tape

2SC5606-T1

Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).

ABSOLUTE MAXIMUM RATINGS (T^A= +25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.3

1.5

°C

tot^Note

115

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy substrate

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P14658EJ3V0DS00 (3rd edition)

Date Published June 2001 NS CP(K)

Printed in Japan

The mark • shows major revised points.

1999, 2001

12 3 4 5 6 7...16

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