Datasheet > 2SC5574G

2SC5574G

更新时间： 2024-09-12 23:20:23

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其他 - ETC		晶体晶体管局域网
页数	文件大小	规格书
1页	55K
描述
TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 4A I(C) \| TO-220FN

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中文翻译

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数据手册

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2SC5574G 数据手册

2SC5574

Transistors

Power Transistor (80V, 4A)

2SC5574

!Features

!External dimensions (Units : mm)

1) Low saturation voltage.

CE(sat)

(Typ. V

= 0.3V at I / I =2 / 0.2A)

10.0

4.5

2) Excellent DC current gain characteristics.

2.8

3.2

3) Pc = 30W (Tc = 25°C)

4) Wide SOA (safe operating area).

5) Complements the 2SA2017.

1.2

1.3

0.8

0.75

2.54

2.6

(

) (

)

(

)

(

)

(1) Base Gate

( ) ( )

( )

1 2

(

)

(2) Collector Drain

(3) Emitter Source

!Absolute maximum ratings (Ta = 25°C)

(

ROHM : TO-220FN

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

100

A(DC)

A(Pulse)

Collector current

Collector power dissipation

W(Tc=25°C)

°C

Junction temperature

Storage temperature

150

Tstg

−55 ∼ +150

°C

Single pulse, Pw=100ms

!Packaging specifications and h^FE

Type

2SC5574

TO-220FN

EFG

Package

hFE

Code

−

500

Basic ordering unit (pieces)

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

100

−

50µA

= 25mA

50µA

CB = 100V

EB = 6

CBO

−

100

−

µA

Emitter cutoff current

EBO

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

CE(sat)

2A/0.2A

= 4V/1A

∗

BE(sat)

1.5

500

−

hFE

−

MHz

CE/IC

Transition frequency

CE = 12V , I

10V , I

−0.2A , f

0A , f 1MHz

5MHz

∗

Output capacitance

Cob

−

∗

Measured using pulse current

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