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2SC5580 PDF预览

2SC5580

更新时间: 2024-01-08 21:33:07
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
1页 46K
描述
Silicon NPN epitaxial planer type(For high-frequency oscillation / switching)

2SC5580 技术参数

生命周期:Obsolete零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.6 pF
集电极-发射极最大电压:8 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):1100 MHz
Base Number Matches:1

2SC5580 数据手册

  
Transistors  
2SC5580  
Silicon NPN epitaxial planer type  
Unit: mm  
For high-frequency oscillation / switching  
+±.1±  
+±.1  
–±.±  
±.15  
±.3  
–±.±5  
3
I Features  
High transition frequency fT  
S-mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
1
2
(±.65) (±.65)  
1.3±±.1  
2.±±±.2  
°  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
8
V
1: Base  
3
50  
V
2: Emitter  
3: Collector  
EIAJ: SC-70  
S-Mini Type Package  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking Symbol: 3R  
Tj  
150  
Tstg  
55 to +150  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Emitter cutoff current  
Symbol  
IEBO  
Conditions  
Min  
Typ  
Max  
Unit  
µA  
V
VEB = 2 V, IC = 0  
2
Collector to base voltage  
Forward current transfer ratio  
hFE ratio  
VCBO  
hFE  
IC = 100 µA, IE = 0  
15  
100  
0.6  
VCE = 4 V, IC = 2 mA  
350  
1.5  
0.5  
hFE(RATIO)  
VCE(sat)  
fT  
VCE = 4 V, IC = 100 µA/2 mA  
IC = 20 mA, IB = 4 mA  
dB  
V
Collector to emitter saturation voltage  
Transition frequency  
VCE = 5 V, IC = 15 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
0.6  
1.1  
1.2  
GHz  
pF  
Collector output capacitance  
Cob  
1.6  
1

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