Datasheet > 2SC5376-B(TE85L,F)

2SC5376-B(TE85L,F)

更新时间： 2024-11-16 15:25:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	226K
描述
TRANSISTOR,BJT,NPN,12V V(BR)CEO,400MA I(C),SOT-416

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技术参数
数据手册

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2SC5376-B(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	最大集电极电流 (IC)：	0.4 A
配置：	Single	最小直流电流增益 (hFE)：	500
最高工作温度：	125 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.1 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	80 MHz
Base Number Matches：	1

2SC5376-B(TE85L,F) 数据手册

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2SC5376

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5376

Audio Frequency General Purpose Amplifier Applications

Unit: mm

For Muting and Switching Applications

•

Low collector saturation voltage: V

(1) = 15 mV (typ.)

CE (sat)

@I = 10 mA/I = 0.5 mA

High collector current: I = 400 mA (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

400

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

−55~125

JEDEC

JEITA

―

stg

TOSHIBA

2-2H1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 2.4 mg (typ.)

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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