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2SC5378S PDF预览

2SC5378S

更新时间: 2024-11-15 23:20:23
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
2页 34K
描述
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 80MA I(C) | SOT-323

2SC5378S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.92其他特性:LOW NOISE
最大集电极电流 (IC):0.08 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:8 V配置:SINGLE
最小直流电流增益 (hFE):135最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):7000 MHzBase Number Matches:1

2SC5378S 数据手册

 浏览型号2SC5378S的Datasheet PDF文件第2页 
Transistor  
2SC5378  
Silicon NPN epitaxial planer type  
For low-voltage low-noise high-frequency oscillation  
Unit: mm  
2.1±0.1  
Features  
Low noise figure NF.  
0.425  
1.25±0.1  
0.425  
High gain.  
1
High transition frequency fT.  
3
S-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing and the magazine  
packing.  
2
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.2±0.1  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
15  
8
V
1:Base  
2:Emitter  
3:Collector  
2
80  
V
EIAJ:SC–70  
S–Mini Type Package  
mA  
mW  
˚C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
150  
Marking symbol : HT  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
IEBO  
Conditions  
min  
typ  
max  
1
Unit  
µA  
Collector cutoff current  
Emitter cutoff current  
Forward current transfer ratio  
Collector output capacitance  
Transition frequency  
Noise figure  
VCB = 10V, IE = 0  
VEB = 1V, IC = 0  
CE = 5V, IC = 10mA  
1
µA  
*1  
hFE  
Cob  
fT  
V
80  
200  
1
VCB = 5V, IE = 0, f = 1MHz  
0.6  
7
pF  
GHz  
dB  
VCE = 5V, IC = 10mA, f = 2GHz  
VCE = 5V, IC = 3mA, f = 1GHz  
VCE = 5V, IC = 10mA, f = 1GHz  
NF  
| S21e  
1.6  
11  
2
2
Foward transfer gain  
|
8.5  
dB  
*1  
h
Rank classification  
FE  
Rank  
hFE  
Q
R
S
80 ~ 115  
95 ~ 155  
135 ~ 200  
1

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