Datasheet > 2SC5382

2SC5382

更新时间： 2024-10-02 05:57:35

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	41K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SC5382 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SC5382

DESCRIPTION

·With TO-220F package

·High Voltage

·High speed switching

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

1200

550

Open collector

I_CM

Collector current-peak

Base current

I_B

I_BM

Base current-peak

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-C}

Thermal resistance junction case

3.13

℃/W

12 3

中文翻译

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与2SC5382相关器件

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2SC5382_15	JMNIC	获取价格	Silicon NPN Power Transistors
2SC5382_2015	JMNIC	获取价格	Silicon NPN Power Transistors
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2SC5383F	ISAHAYA	获取价格	暂无描述
2SC5383G	ISAHAYA	获取价格	Transistor
2SC5384	ISAHAYA	获取价格	Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Ep
2SC5384	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, NPN, Silicon, ULTRA SUPER MINI
2SC5384_10	ISAHAYA	获取价格	For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Typ