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2SC5386_2015 PDF预览

2SC5386_2015

更新时间: 2024-10-31 01:18:51
品牌 Logo 应用领域
锦美电子 - JMNIC /
页数 文件大小 规格书
4页 203K
描述
Silicon NPN Power Transistors

2SC5386_2015 数据手册

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JMnic  
Product Specification  
Silicon NPN Power Transistors  
2SC5386  
DESCRIPTION  
·With TO-3P(H)IS package  
·High voltage;high speed  
·Low collector saturation voltage  
APPLICATIONS  
·Horizontal deflection output for high  
resolution display,color TV  
·High speed switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
Fig.1 simplified outline (TO-3P(H)IS) and symbol  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
1500  
Open base  
600  
V
Open collector  
5
V
8
16  
A
ICM  
Collector current-Peak  
Base current  
A
IB  
4
A
PC  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
-55~150  
Tstg  

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