Datasheet > 2SC5395F

2SC5395F

更新时间： 2024-11-25 05:05:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	201K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SC5395F 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SC5395F 数据手册

〈transistor〉

2SC5395

For Low Frequency Power Amplify Application

Silicon NPN Epitaxial Type Micro（Frame type）

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2SC5395 is a silicon NPN epitaxial type transistor.

It is designed for low frequency voltage amplify

application.

4.0

0.1

0.45

2.5

① ② ③

TERMINAL CONNECTOR

①：EMITTER

EIAJ： -

JEDEC： -

②：COLLECTOR

③：BASE

MAXIMUM RATINGS（Ta=25℃）

Unit

Symbol

VCBO

VEBO

VCEO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

MARKING

3 9 5

200

℃

□□

450

Collector dissipation

+150

-55～+150

Junction temperature

Storage temperature

hFE Item

Tstg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Parameter

Symbol

Test conditions

Unit

Min

Max

V(BR)CEO

ICBO

IEBO

hFE

C to B break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain ※

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Noise figure

I_C= 100μA , RBE= ∞

0.1

500

μA

V _CB= 50V , I _E= 0mA

V _EB= 6V , I _C= 0mA

V _CE= 6V , I_C= 1mA

150

hFE

V _CE= 6V , I_C= 0.1mA

I_C= 100mA , I _B= 10mA

V _CE= 6V , I _E= -10mA

V _CB= 6V , I _E= 0mA,f=1MHz

VCE(sat)

0.3

200

2.5

MHz

Cob

V _CE= 6V , I _E= -0.1mA,f=1kHz,RG=2kΩ

※：It shows hFE classification at right table.

Item

hFE

150～300 250～500

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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与2SC5395F相关器件

型号	品牌	获取价格	描述	数据表
2SC5396	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
2SC5396	ISAHAYA	获取价格	SILICON NPN EPITAXIAL TYPE TRANSISTOR
2SC5397	ISAHAYA	获取价格	TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE
2SC5397	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
2SC5397_12	ISAHAYA	获取价格	For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro
2SC5397B	ISAHAYA	获取价格	Transistor
2SC5397C	ISAHAYA	获取价格	暂无描述
2SC5397D	ISAHAYA	获取价格	Transistor
2SC5397E	ISAHAYA	获取价格	暂无描述
2SC5398	ISAHAYA	获取价格	TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE MICRO