Datasheet > 2SC5395_13

2SC5395_13

更新时间： 2024-10-30 12:31:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	209K
描述
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SC5395_13 数据手册

〈transistor〉

2SC5395

For Low Frequency Power Amplify Application

Silicon NPN Epitaxial Type Micro（Frame type）

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2SC5395 is a silicon NPN epitaxial type transistor.

It is designed for low frequency voltage amplify

application.

4.0

0.1

0.45

2.5

① ② ③

TERMINAL CONNECTOR

①：EMITTER

EIAJ： -

JEDEC： -

②：COLLECTOR

③：BASE

MAXIMUM RATINGS（Ta=25℃）

Unit

Symbol

VCBO

VEBO

VCEO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

MARKING

3 9 5

200

℃

□□

450

Collector dissipation

+150

-55～+150

Junction temperature

Storage temperature

hFE Item

Tstg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Parameter

Symbol

Test conditions

Unit

Min

Max

V(BR)CEO

ICBO

IEBO

hFE

C to B break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain ※

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Noise figure

I_C= 100μA , RBE= ∞

0.1

500

μA

V _CB= 50V , I _E= 0mA

V _EB= 6V , I _C= 0mA

_CE= 6V , I_C= 1mA

150

hFE

V _CE= 6V , I_C= 0.1mA

VCE(sat)

I_C= 100mA , I _B= 10mA

V _CE= 6V , I _E= -10mA

V _CB= 6V , I _E= 0mA,f=1MHz

0.3

200

2.5

MHz

Cob

V _CE= 6V , I _E= -0.1mA,f=1kHz,RG=2kΩ

※：It shows hFE classification at right table.

Item

hFE

150～300 250～500

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

下载PDF

与2SC5395_13相关器件

型号	品牌	获取价格	描述	数据表
2SC5395E	ISAHAYA	获取价格	Transistor
2SC5395F	ISAHAYA	获取价格	Transistor
2SC5396	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.02A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
2SC5396	ISAHAYA	获取价格	SILICON NPN EPITAXIAL TYPE TRANSISTOR
2SC5397	ISAHAYA	获取价格	TRANSISTOR FOR LOW FREQUENCY AMPLIFY, MEDIAM FREQUENCY AMPLIFY SILICON NPN EPITAXIAL TYPE
2SC5397	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
2SC5397_12	ISAHAYA	获取价格	For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro
2SC5397B	ISAHAYA	获取价格	Transistor
2SC5397C	ISAHAYA	获取价格	暂无描述
2SC5397D	ISAHAYA	获取价格	Transistor