Datasheet > 2SC5398_12

2SC5398_12

更新时间： 2022-04-20 02:01:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
3页	184K
描述
For Low Frequency Amplify Application Silicon NPN Epitaxial Type Micro

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2SC5398_12 数据手册

〈transistor〉

2SC5398

For Low Frequency Amplify Application

Silicon NPN Epitaxial Type Micro（Frame type）

DESCRIPTION

OUTLINE DRAWING

UNIT：mm

2SC5398 is a silicon NPN epitaxial type transistor.

It is designed for low frequency voltage amplify

application.

TERMINAL CONNECTOR

①：EMITTER

EIAJ： -

JEDEC： -

②：COLLECTOR

③：BASE

MAXIMUM RATINGS（Ta=25℃）

Unit

Symbol

VCBO

VEBO

VCEO

Parameter

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

Ratings

MARKING

3 9 8

100

℃

□□

450

Collector dissipation

+150

-55～+150

Junction temperature

Storage temperature

hFE Item

Type name

Tstg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Parameter

Symbol

Test conditions

Unit

Min

Max

V(BR)CEO

ICBO

IEBO

C to E break down voltage

Collector cut off current

Emitter cut off current

I_C= 100μA , RBE= ∞

0.5

560

μA

V _CB= 50V , I _E= 0mA

V _EB= 4V , I _C= 0mA

V _CE= 6V , I_C= 1mA

－

(※)

－

hFE

DC forward current gain ※

DC forward current gain

C to E Saturation voltage

Gain bandwidth product

Collector output capacitance

120

hFE

_CE= 6V , I_C= 0.1mA

VCE(sat)

I_C=30mA , I _B= 1.5mA

V _CE= 6V , I _E= -10mA

V _CB= 6V , I _E= 0mA,f=1MHz

0.3

200

2.0

MHz

Cob

※：It shows hFE classification at right table.

Item

hFE

120～270 180～390

270～560

ISAHAYA ELECTRONICS CORPORATION

12 3

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