2SC5383F

更新时间： 2024-11-16 12:58:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	184K
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中文翻译

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数据手册

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2SC5383F 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SC5383

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC5383 is a ultra super mini package resin sealed

silicon NPN epitaxial transistor,

It is designed for low frequency voltage application.

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）

●Excellent linearity of DC forward gain.

●Ultra super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

TERMINAL CONNECTER

Amplify application.

①：BASE

JEITA：SC-75A

JEDEC：-

②：EMITTER

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

Unit

MARKING

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

200

℃

L F

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋150

-55～＋150

Type name

hFE Item

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain ※

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Noise figure

V(BR)CEO

ICBO

IEBO

I _C=100μA ,R _BE=∞

V _CB=50V, I _E=0mA

V _EB=6V, I _C=0mA

V _CE=6V, I _C=1mA

0.1

500

μA

hFE

150

hFE

_CE=6V, I _C=0.1mA

VCE(sat) I _C=100mA ,I_B=10mA

0.3

MHz

Cob

_CE=6V, I _E=-10mA

V _CB=6V, I _E=0,f=1MHz

V _CE=6V, I _E=-0.1mA,f=1kHz,RG=2kΩ

200

2.5

※） It shows hFE classification at right table.

Item

hFE Item

150～300

250～500

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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